Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Please check again later.
Stock information temporarily unavailable.
£ 1.74
Each (In a Pack of 5) (ex VAT)
Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1
Select packaging type
5
£ 1.74
Each (In a Pack of 5) (ex VAT)
Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB029N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | £ 1.74 | £ 8.70 |
50 - 120 | £ 1.63 | £ 8.15 |
125 - 245 | £ 1.55 | £ 7.75 |
250 - 495 | £ 1.45 | £ 7.25 |
500+ | £ 1.35 | £ 6.75 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC