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IGBT 650V 40A Reverse Conducting TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
IGBT 650V 40A Reverse Conducting TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
IGBT 650V 50A TRENCHSTOP 10-40kHz TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
IGBT 650V 50A TRENCHSTOP 10-40kHz TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
Infineon Dual N-channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TISON
  • Maximum Operating Temperature +150 °C
  • Number of Elements per Chip 2
  • Length 5.1mm
  • Typical Turn-On Delay Time 3.3 ns, 3.8 ns
  • Brand Infineon
See similar products in MOSFET Transistors
Infineon Dual N-channel MOSFET, 40 A, 25 V OptiMOS, 8-Pin TISON
  • Maximum Operating Temperature +150 °C
  • Number of Elements per Chip 2
  • Length 5.1mm
  • Typical Turn-On Delay Time 3.3 ns, 3.8 ns
  • Brand Infineon
See similar products in MOSFET Transistors
Infineon Dual N-channel MOSFET, 40 A, 30 V OptiMOS, 8-Pin TISON
  • Maximum Operating Temperature +150 °C
  • Number of Elements per Chip 2
  • Length 5.1mm
  • Typical Turn-On Delay Time 1.8 ns, 5 ns
  • Brand Infineon
See similar products in MOSFET Transistors
Infineon Dual N-channel MOSFET, 40 A, 30 V OptiMOS, 8-Pin TISON
  • Maximum Operating Temperature +150 °C
  • Number of Elements per Chip 2
  • Length 5.1mm
  • Typical Turn-On Delay Time 1.8 ns, 5 ns
  • Brand Infineon
See similar products in MOSFET Transistors
Infineon IGBT, 53 A 600 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 600 V
See similar products in IGBT Transistors
Infineon IGBT, 53 A 600 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 600 V
See similar products in IGBT Transistors
Infineon IGBT, 67 A 600 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 600 V
See similar products in IGBT Transistors
Infineon IGBT, 67 A 600 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 600 V
See similar products in IGBT Transistors
Infineon IGBT, 67 A 600 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 600 V
See similar products in IGBT Transistors
Infineon IGBT, 67 A 600 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 600 V
See similar products in IGBT Transistors
Infineon IGBT, 80 A 600 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 600 V
See similar products in IGBT Transistors
Infineon IGBT, 80 A 600 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 600 V
See similar products in IGBT Transistors
Infineon IPB60R160P6ATMA1 N-channel MOSFET, 23.8 A, 650 V CoolMOS P6, 3-Pin TO-263
  • Maximum Operating Temperature +150 °C
  • Number of Elements per Chip 1
  • Length 10.31mm
  • Typical Turn-On Delay Time 12.5 ns
  • Brand Infineon
See similar products in MOSFET Transistors
Infineon IPD090N03LGATMA1 N-channel MOSFET, 40 A, 30 V OptiMOS3, 3-Pin TO-252
  • Maximum Operating Temperature +175 °C
  • Number of Elements per Chip 1
  • Length 6.73mm
  • Typical Turn-On Delay Time 4 ns
  • Brand Infineon
See similar products in MOSFET Transistors
Infineon IPD50R280CEAUMA1 N-channel MOSFET, 18.1 A, 550 V CoolMOS CE, 3-Pin TO-252
  • Maximum Operating Temperature +150 °C
  • Number of Elements per Chip 1
  • Length 6.73mm
  • Typical Turn-On Delay Time 8 ns
  • Brand Infineon
See similar products in MOSFET Transistors
Infineon IPD50R380CEAUMA1 N-channel MOSFET, 14.1 A, 550 V CoolMOS CE, 3-Pin TO-252
  • Maximum Operating Temperature +150 °C
  • Number of Elements per Chip 1
  • Length 6.73mm
  • Typical Turn-On Delay Time 7.2 ns
  • Brand Infineon
See similar products in MOSFET Transistors
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