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Infineon BCV 46 PNP Darlington Pair, 500 mA 60 V HFE:2000, 3-Pin SOT-23
  • Maximum Collector Emitter Saturation Voltage 1 V
  • Maximum Operating Temperature +150 °C
  • Number of Elements per Chip 1
  • Maximum Base Emitter Saturation Voltage 1.5 V
  • Length 2.9mm
See similar products in Darlington Transistors
Infineon IKW50N60T IGBT, 100 A 600 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.03mm
  • Brand Infineon
  • Maximum Collector Emitter Voltage 600 V
  • Maximum Continuous Collector Current 100 A
See similar products in IGBT Transistors
Infineon IGW50N60TPXKSA1 IGBT, 80 A 600 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 600 V
See similar products in IGBT Transistors
Infineon IGW50N60TPXKSA1 IGBT, 80 A 600 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 600 V
See similar products in IGBT Transistors
Infineon IKW30N60DTPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 600 V
See similar products in IGBT Transistors
Infineon IKW30N60DTPXKSA1 IGBT, 53 A 600 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 600 V
See similar products in IGBT Transistors
Infineon IKW30N65ES5XKSA1 IGBT, 62 A 650 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
Infineon IKW30N65ES5XKSA1 IGBT, 62 A 650 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
Infineon IKW30N65WR5XKSA1 IGBT, 60 A 650 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
Infineon IKW30N65WR5XKSA1 IGBT, 60 A 650 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
Infineon IKW40N65ES5XKSA1 IGBT, 79 A 650 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
Infineon IKW40N65ES5XKSA1 IGBT, 79 A 650 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
Infineon IKW50N65WR5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
Infineon IKW50N65WR5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
Infineon IKW75N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
Infineon IKW75N65ES5XKSA1 IGBT, 80 A 650 V, 3-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Length 16.13mm
  • Transistor Configuration Single
  • Brand Infineon
  • Maximum Collector Emitter Voltage 650 V
See similar products in IGBT Transistors
Infineon IDP15E65D1XKSA1 Switching Diode, 650V 30A, 2-Pin TO-220
  • Diode Configuration Single
  • Rectifier Type Switching
  • Maximum Operating Temperature +175 °C
  • Number of Elements per Chip 1
  • Length 10.2mm
See similar products in Rectifier & Schottky Diodes
Infineon IDP15E65D1XKSA1 Switching Diode, 650V 30A, 2-Pin TO-220
  • Diode Configuration Single
  • Rectifier Type Switching
  • Maximum Operating Temperature +175 °C
  • Number of Elements per Chip 1
  • Length 10.2mm
See similar products in Rectifier & Schottky Diodes
Infineon IDP15E65D2XKSA1 Switching Diode, 650V 30A, 2-Pin TO-220
  • Diode Configuration Single
  • Rectifier Type Switching
  • Maximum Operating Temperature +175 °C
  • Number of Elements per Chip 1
  • Length 10.2mm
See similar products in Rectifier & Schottky Diodes
Infineon IDP20C65D2XKSA1 Dual Switching Diode, 2x Common Cathode Pair, 650V 20A, 3-Pin TO-220
  • Diode Configuration 2x Common Cathode Pair
  • Rectifier Type Switching
  • Maximum Operating Temperature +175 °C
  • Number of Elements per Chip 2
  • Length 10.36mm
See similar products in Rectifier & Schottky Diodes
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