Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2mm
Typical Gate Charge @ Vgs
2.1 nC @ 4.5 V
Width
2mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
0.8mm
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P.O.A.
10
P.O.A.
10
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2mm
Typical Gate Charge @ Vgs
2.1 nC @ 4.5 V
Width
2mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
0.8mm