Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum Continuous Collector Current
4 A
Maximum Collector Emitter Voltage
350 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
500
Maximum Base Emitter Saturation Voltage
1.8 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
500µA
Maximum Operating Temperature
+150 °C
Length
6.6mm
Height
6.2mm
Width
2.4mm
Dimensions
6.6 x 2.4 x 6.2mm
Maximum Power Dissipation
100 W
Product details
NPN Darlington Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
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P.O.A.
Production pack (Tube)
10
P.O.A.
Production pack (Tube)
10
Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum Continuous Collector Current
4 A
Maximum Collector Emitter Voltage
350 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
500
Maximum Base Emitter Saturation Voltage
1.8 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
500µA
Maximum Operating Temperature
+150 °C
Length
6.6mm
Height
6.2mm
Width
2.4mm
Dimensions
6.6 x 2.4 x 6.2mm
Maximum Power Dissipation
100 W
Product details
NPN Darlington Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.