Technical documents
Specifications
Minimum Operating Temperature
-50°C
Maximum Switching Power AC
1.25 kVA
Maximum Operating Temperature
+70°C
Switching Current
5A
Isolation Coil To Contact
2kV rms
Maximum Switching Voltage AC
250V ac
Contact Material
Gold Plated
Coil Voltage
24V dc
Mounting Type
PCB Mount
Terminal Type
Through Hole
Contact Configuration
4PDT
Length
20.8mm
Life
100000000 (DC Mechanical) cycles, 200000 (Electrical) cycles, 50000000 (AC Mechanical) cycles
Depth
27.2mm
Coil Power
900mW
Height
35.2mm
Coil Resistance
650 <ohm/>
Brand
PanasonicCountry of Origin
Japan
Product details
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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P.O.A.
20
P.O.A.
20
Technical documents
Specifications
Minimum Operating Temperature
-50°C
Maximum Switching Power AC
1.25 kVA
Maximum Operating Temperature
+70°C
Switching Current
5A
Isolation Coil To Contact
2kV rms
Maximum Switching Voltage AC
250V ac
Contact Material
Gold Plated
Coil Voltage
24V dc
Mounting Type
PCB Mount
Terminal Type
Through Hole
Contact Configuration
4PDT
Length
20.8mm
Life
100000000 (DC Mechanical) cycles, 200000 (Electrical) cycles, 50000000 (AC Mechanical) cycles
Depth
27.2mm
Coil Power
900mW
Height
35.2mm
Coil Resistance
650 <ohm/>
Brand
PanasonicCountry of Origin
Japan
Product details
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.