Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 8mA
Maximum Drain Source Voltage
0.2 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
80 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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£ 0.35
Each (Supplied on a Reel) (ex VAT)
50
£ 0.35
Each (Supplied on a Reel) (ex VAT)
50
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
50 - 50 | £ 0.35 | £ 17.50 |
100 - 950 | £ 0.15 | £ 7.50 |
1000 - 2950 | £ 0.14 | £ 7.00 |
3000 - 8950 | £ 0.12 | £ 6.00 |
9000+ | £ 0.12 | £ 6.00 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 8mA
Maximum Drain Source Voltage
0.2 V
Maximum Gate Source Voltage
-40 V
Maximum Drain Gate Voltage
40V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
80 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Dimensions
2.92 x 1.3 x 0.93mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.93mm
Width
1.3mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.