Technical documents
Specifications
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
330 mA
Maximum Drain Source Voltage
9 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Depletion
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +0.6 V
Maximum Operating Temperature
+125 °C
Transistor Material
Si
Length
3.05mm
Width
1.75mm
Number of Elements per Chip
1
Height
1.3mm
Minimum Operating Temperature
-25 °C
Product details
LND01 N-Channel MOSFET Transistors
The Microchip LND01 is a low threshold, depletion mode (normally on) MOSFET transistor. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
Features
Bi-directional
Low On-Resistance
Low Input Capacitance
Fast Switching Speeds
High Input Impedance and High Gain
Low Power Drive Requirement
Ease of Parallel Operation
MOSFET Transistors, Microchip
Stock information temporarily unavailable.
Please check again later.
P.O.A.
3000
P.O.A.
3000
Technical documents
Specifications
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
330 mA
Maximum Drain Source Voltage
9 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Depletion
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +0.6 V
Maximum Operating Temperature
+125 °C
Transistor Material
Si
Length
3.05mm
Width
1.75mm
Number of Elements per Chip
1
Height
1.3mm
Minimum Operating Temperature
-25 °C
Product details
LND01 N-Channel MOSFET Transistors
The Microchip LND01 is a low threshold, depletion mode (normally on) MOSFET transistor. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
Features
Bi-directional
Low On-Resistance
Low Input Capacitance
Fast Switching Speeds
High Input Impedance and High Gain
Low Power Drive Requirement
Ease of Parallel Operation