Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
600 A
Maximum Drain Source Voltage
40 V
Series
GigaMOS, HiperFET
Package Type
SMPD
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
590 nC @ 10 V
Number of Elements per Chip
1
Width
23.25mm
Length
25.25mm
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
5.7mm
Country of Origin
Germany
Product details
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
€ 749.54
€ 37.477 Each (In a Tube of 20) (ex VAT)
20
€ 749.54
€ 37.477 Each (In a Tube of 20) (ex VAT)
Stock information temporarily unavailable.
20
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
600 A
Maximum Drain Source Voltage
40 V
Series
GigaMOS, HiperFET
Package Type
SMPD
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
590 nC @ 10 V
Number of Elements per Chip
1
Width
23.25mm
Length
25.25mm
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
5.7mm
Country of Origin
Germany
Product details
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS