N-Channel MOSFET, 66 A, 850 V, 3-Pin PLUS247 IXYS IXFX66N85X

RS Stock No.: 146-4245Brand: IXYSManufacturers Part No.: IXFX66N85X
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Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

66 A

Maximum Drain Source Voltage

850 V

Series

HiperFET

Package Type

PLUS247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.25 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

230 nC @ 10 V

Height

21.34mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

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P.O.A.

N-Channel MOSFET, 66 A, 850 V, 3-Pin PLUS247 IXYS IXFX66N85X

30

Available in multiples of 1
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

P.O.A.

N-Channel MOSFET, 66 A, 850 V, 3-Pin PLUS247 IXYS IXFX66N85X
Stock information temporarily unavailable.

30

Available in multiples of 1
30P.O.A.
60P.O.A.
90P.O.A.
120P.O.A.
150P.O.A.
180P.O.A.
210P.O.A.
240P.O.A.
270P.O.A.
300P.O.A.
330P.O.A.
360P.O.A.
390P.O.A.
420P.O.A.
450P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

66 A

Maximum Drain Source Voltage

850 V

Series

HiperFET

Package Type

PLUS247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.25 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

230 nC @ 10 V

Height

21.34mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more