Infineon SMBT2907AE6327HTSA1 PNP Bipolar Transistor, 600 mA, 60 V, 3-Pin SOT-23
Technical documents
Specifications
Brand
InfineonTransistor Type
PNP
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
200 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2.9 x 1.3 x 0.9mm
Product details
General Purpose PNP Transistors, Infineon
Bipolar Transistors, Infineon
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P.O.A.
1000
P.O.A.
1000
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Technical documents
Specifications
Brand
InfineonTransistor Type
PNP
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
200 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2.9 x 1.3 x 0.9mm
Product details
General Purpose PNP Transistors, Infineon
Bipolar Transistors, Infineon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products