Technical documents
Specifications
Brand
InfineonMemory Size
16kbit
Organisation
2K x 8 bit
Interface Type
Serial-2 Wire, Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
3000ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Maximum Operating Supply Voltage
3.65 V
Width
3.98mm
Height
1.48mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Number of Words
2K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Product details
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 8.50
€ 1.699 Each (In a Pack of 5) (ex VAT)
Standard
5
€ 8.50
€ 1.699 Each (In a Pack of 5) (ex VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 10 | € 1.699 | € 8.50 |
15 - 25 | € 1.534 | € 7.67 |
30 - 95 | € 1.51 | € 7.55 |
100 - 495 | € 1.333 | € 6.67 |
500+ | € 1.333 | € 6.67 |
Technical documents
Specifications
Brand
InfineonMemory Size
16kbit
Organisation
2K x 8 bit
Interface Type
Serial-2 Wire, Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
3000ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Maximum Operating Supply Voltage
3.65 V
Width
3.98mm
Height
1.48mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Number of Words
2K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Product details
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.