infineon MOSFETs

You are viewing 1 - 20 of 3282 results
Display:
Results per page
20
  • 20
  • 50
  • 100
Price
(Price shown excludes VAT)
Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material Automotive Standard
BF999E6327HTSA1 N-Channel MOSFET Tetrode, 1.4 A, 30 V, 3-Pin SOT-23 Infineon Infineon N 1.4 A 30 V - 1.5V 0.8V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement MOSFET Tetrode 200 mW 2.5 pF @ 10 V - 2.9 x 1.3 x 0.9mm - - - - 1.3mm 0.9mm 2.9mm - 27 dB +150 °C 1 - Si -
BSB028N06NN3GXUMA1 N-Channel MOSFET, 90 A, 60 V OptiMOS 3, 7-Pin WDSON Infineon Infineon N 90 A 60 V 2.8 mΩ - - -20 V, +20 V WDSON Surface Mount 7 Single Enhancement Power MOSFET 78 W 8800 pF @ 30 V 108 nC @ 10 V 6.35 x 5.05 x 0.53mm 38 ns OptiMOS 3 21 ns 83s 5.05mm 0.53mm 6.35mm 1.2V - +150 °C 1 -40 °C Si -
BSB165N15NZ3GXUMA1 N-Channel MOSFET, 45 A, 150 V OptiMOS, 7-Pin WDSON Infineon Infineon N 45 A 150 V 17.9 mΩ - - -20 V, +20 V WDSON Surface Mount 7 Single Enhancement Power MOSFET 78 W 2100 pF @ 75 V 26 nC @ 10 V 6.35 x 5.05 x 0.53mm 17 ns OptiMOS 10 ns 48s 5.05mm 0.53mm 6.35mm 1.2V - +150 °C 1 -40 °C Si -
BSC009NE2LSATMA1 N-Channel MOSFET, 100 A, 25 V OptiMOS, 8-Pin TSDSON Infineon Infineon N 100 A 25 V 900 μΩ - - -20 V, +20 V TSDSON Surface Mount 8 Single Enhancement Power MOSFET 96 W 5800 pF @ 12 V 72 nC @ 10 V 6.1 x 5.35 x 1.1mm 48 ns OptiMOS 10 ns 170s 5.35mm 1.1mm 6.1mm 1V - +150 °C 1 -55 °C Si -
BSC010NE2LSATMA1 N-Channel MOSFET, 100 A, 25 V OptiMOS, 8-Pin TDSON Infineon Infineon N 100 A 25 V 1.3 mΩ - - -20 V, +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 96 W 4700 pF @ 12 V 31 nC @ 10 V 6.1 x 5.35 x 1.1mm 34 ns OptiMOS 6.7 ns 170s 5.35mm 1.1mm 6.1mm 1V - +150 °C 1 -55 °C Si -
BSC011N03LSATMA1 N-Channel MOSFET, 100 A, 30 V OptiMOS, 8-Pin TDSON Infineon Infineon N 100 A 30 V 1.4 mΩ - - -20 V, +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 96 W 4700 pF @ 15 v 36 nC @ 4.5 V 6.1 x 5.35 x 1.1mm 37 ns OptiMOS 6.7 ns 170s 5.35mm 1.1mm 6.1mm 1V - +150 °C 1 -55 °C Si -
BSC011N03LSIATMA1 N-Channel MOSFET, 100 A, 30 V OptiMOS, 8-Pin TDSON Infineon Infineon N 100 A 30 V 1.4 mΩ - - -20 V, +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 96 W 4300 pF @ 15 V 34 nC @ 4.5 V 6.1 x 5.35 x 1.1mm 35 ns OptiMOS 6.4 ns 160s 5.35mm 1.1mm 6.1mm 0.56V - +150 °C 1 -55 °C Si -
BSC014N03MSGATMA1 N-Channel MOSFET, 100 A, 30 V OptiMOS 3, 8-Pin TDSON Infineon Infineon N 100 A 30 V 1.75 mΩ - - -20 V, +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 139 W 10000 pF @ 15 V 130 nC @ 4.5 V 6.1 x 5.35 x 1.1mm 43 ns OptiMOS 3 32 ns 140s 5.35mm 1.1mm 6.1mm 1.1V - +150 °C 1 -55 °C Si -
BSC014N06NSATMA1 N-Channel MOSFET, 100 A, 60 V OptiMOS 5, 8-Pin TDSON Infineon Infineon N 100 A 60 V 2.2 mΩ - - -20 V, +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 156 W 6500 pF @ 30 V 89 nC @ 10 V 6 x 5 x 1.1mm 43 ns OptiMOS 5 23 ns 150s 5mm 1.1mm 6mm 1.2V - +150 °C 1 -55 °C Si -
BSC016N06NSATMA1 N-Channel MOSFET, 100 A, 60 V OptiMOS 5, 8-Pin TDSON Infineon Infineon N 100 A 60 V 2.4 mΩ - - -20 V, +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 139 W 5200 pF @ 30 V 71 nC @ 10 V 6 x 5 x 1.1mm 35 ns OptiMOS 5 19 ns 140s 5mm 1.1mm 6mm 1.2V - +150 °C 1 -55 °C Si -
BSC028N06NSATMA1 N-Channel MOSFET, 100 A, 60 V OptiMOS 5, 8-Pin TDSON Infineon Infineon N 100 A 60 V 4.2 mΩ - - -20 V, +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 83 W 2700 pF @ 30 V 37 nC @ 10 V 6.1 x 5.35 x 1.1mm 19 ns OptiMOS 5 11 ns 100s 5.35mm 1.1mm 6.1mm 1.2V - +150 °C 1 -55 °C Si -
BSC030P03NS3GAUMA1 P-Channel MOSFET, 100 A, 30 V OptiMOS P, 8-Pin TDSON Infineon Infineon P 100 A 30 V 4.6 mΩ - - -25 V, +25 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 125 W 10500 pF @ -15 V 140 nC @ 10 V 6.1 x 5.35 x 1.1mm 98 ns OptiMOS P 27 ns 93s 5.35mm 1.1mm 6.1mm 1.1V - +150 °C 1 -55 °C Si -
BSC039N06NSATMA1 N-Channel MOSFET, 100 A, 60 V OptiMOS 5, 8-Pin TDSON Infineon Infineon N 100 A 60 V 5.9 mΩ - - -20 V, +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 69 W 2000 pF @ 30 V 27 nC @ 10 V 6.1 x 5.35 x 1.1mm 20 ns OptiMOS 5 12 ns 85s 5.35mm 1.1mm 6.1mm 1.2V - +150 °C 1 -55 °C Si -
BSC042NE7NS3GATMA1 N-Channel MOSFET, 100 A, 75 V OptiMOS 3, 8-Pin TDSON Infineon Infineon N 100 A 75 V 4.2 mΩ - - -20 V, +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 125 W 3600 pF @ 37.5 V 52 nC @ 10 V 6.1 x 5.35 x 1.1mm 34 ns OptiMOS 3 14 ns 89s 5.35mm 1.1mm 6.1mm 1.2V - +150 °C 1 -55 °C Si -
BSC046N10NS3GATMA1 N-Channel MOSFET, 100 A, 100 V OptiMOS 3, 8-Pin TDSON Infineon Infineon N 100 A 100 V 8.6 mΩ - - -20 V, +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 156 W 4500 pF @ 50 V 63 nC @ 10 V 6.1 x 5.35 x 1.1mm 41 ns OptiMOS 3 16 ns 96s 5.35mm 1.1mm 6.1mm 1.2V - +150 °C 1 -55 °C Si -
BSC047N08NS3GATMA1 N-Channel MOSFET, 100 A, 80 V OptiMOS 3, 8-Pin TDSON Infineon Infineon N 100 A 80 V 8.9 mΩ - - -20 V, +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 125 W 3600 pF @ 40 V 52 nC @ 10 V 6.1 x 5.35 x 1.1mm 44 ns OptiMOS 3 18 ns 120s 5.35mm 1.1mm 6.1mm 1.2V - +150 °C 1 -55 °C Si -
BSC070N10NS3GATMA1 N-Channel MOSFET, 100 A, 100 V OptiMOS 3, 8-Pin TDSON Infineon Infineon N 100 A 100 V 8.6 mΩ - - -20 V, +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 156 W 4500 pF @ 50 V 63 nC @ 10 V 6.1 x 5.35 x 1.1mm 41 ns OptiMOS 3 16 ns 96s 5.35mm 1.1mm 6.1mm 1.2V - +150 °C 1 -55 °C Si -
BSC109N10NS3GATMA1 N-Channel MOSFET, 63 A, 100 V OptiMOS 3, 8-Pin TDSON Infineon Infineon N 63 A 100 V 10.9 mΩ - - -20 V, +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 78 W 1900 pF @ 50 V 26 nC @ 10 V 6.1 x 5.35 x 1.1mm 19 ns OptiMOS 3 12 ns 57s 5.35mm 1.1mm 6.1mm 1.2V - +150 °C 1 -55 °C Si -
BSC130P03LSGAUMA1 P-Channel MOSFET, 22.5 A, 30 V OptiMOS P, 8-Pin TDSON Infineon Infineon P 22.5 A 30 V 13 mΩ - - -25 V, +25 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 69 W 2760 pF @ 15 V 54.9 nC @ 10 V 6.1 x 5.35 x 1.1mm 43.5 ns OptiMOS P 11.4 ns 39s 5.35mm 1.1mm 6.1mm 1.2V - +150 °C 1 -55 °C Si -
BSC159N10LSFGATMA1 N-Channel MOSFET, 63 A, 100 V OptiMOS 2, 8-Pin TDSON Infineon Infineon N 63 A 100 V 21.5 mΩ - - -20 V, +20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 114 W 1900 pF @ 50 V 26 nC @ 10 V 6.1 x 5.35 x 1.1mm 28 ns OptiMOS 2 13 ns 59s 5.35mm 1.1mm 6.1mm 1.2V - +150 °C 1 -55 °C Si -
Check Our Stock Volumes
Enter the quantity you require and click 'Check'.

Stock information was last updated on
.
This information is updated daily so availability may vary at time of order placement.
RS Stock No:
I'm Looking For 
Compare list full
You can only compare 8 products at a time

View or remove your products on your Compare page
You are viewing 1 - 20 of 3282 results