IGBTs

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Part Details Brand Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Maximum Power Dissipation Number of Transistors Package Type Mounting Type Channel Type Pin Count Switching Speed Transistor Configuration Length Width Height Dimensions Gate Capacitance Energy Rating Maximum Operating Temperature Minimum Operating Temperature Automotive Standard
ON Semiconductor FGH40T120SQDNL4 P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247 ON Semiconductor 160 A 1200 V ±30V 454 W 1 TO-247 Through Hole P 4 - Single 15.8mm 5.2mm 22.74mm 15.8 x 5.2 x 22.74mm 5000pF - +175 °C -55 °C -
ON Semiconductor FGH60T65SQD-F155 P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03 ON Semiconductor 60 A 650 V ±30V 333 W 1 TO-247 G03 Through Hole P 3 - Single 15.87mm 4.82mm 20.82mm 15.87 x 4.82 x 20.82mm 3813pF 50µJ +175 °C -55 °C -
650V/75 FAST IGBT ON Semiconductor 200 A 650 V ±20V 375 W 1 TO-247 Through Hole P 4 1MHz Single 15.8mm 5.2mm 22.74mm 15.8 x 5.2 x 22.74mm 5100pF 160µJ +175 °C -55 °C -
650V/75 FAST IGBT ON Semiconductor 200 A 650 V ±20V 375 W 1 TO-247 Through Hole P 4 1MHz Single 15.8mm 5.2mm 22.74mm 15.8 x 5.2 x 22.74mm 5100pF 160µJ +175 °C -55 °C -
FS3 T IGBT 75A 650V 4L ON Semiconductor 150 A 650 V ±20V 455 W 1 TO-247 Through Hole P 4 1MHz Single 15.8mm 5.2mm 22.74mm 15.8 x 5.2 x 22.74mm 3710pF 160µJ +175 °C -55 °C -
FS3 T IGBT 75A 650V 4L ON Semiconductor 150 A 650 V ±20V 455 W 1 TO-247 Through Hole P 4 1MHz Single 15.8mm 5.2mm 22.74mm 15.8 x 5.2 x 22.74mm 3710pF 160µJ +175 °C -55 °C -
FS3 T IGBT 75A 650V 4WL ON Semiconductor 150 A 650 V ±20V 455 W 1 TO-247 Through Hole P 4 1MHz Single 15.8mm 5.2mm 22.74mm 15.8 x 5.2 x 22.74mm 3710pF - +175 °C -55 °C -
FS3 T IGBT 75A 650V 4WL ON Semiconductor 150 A 650 V ±20V 455 W 1 TO-247 Through Hole P 4 1MHz Single 15.8mm 5.2mm 22.74mm 15.8 x 5.2 x 22.74mm 3710pF - +175 °C -55 °C -
FS4 T IGBT 74A 650V 4L ON Semiconductor 150 A 650 V ±20V 375 W 1 TO-247 Through Hole P 4 1MHz Single 15.8mm 5.2mm 22.74mm 15.8 x 5.2 x 22.74mm 4845pF 160µJ +175 °C -55 °C -
FS4 T IGBT 74A 650V 4L ON Semiconductor - - - 375 W - TO-247 Through Hole P 4 - Single 15.8mm 5.2mm 22.74mm 15.8 x 5.2 x 22.74mm - - +175 °C -55 °C -
IGBT 1200V 15A Field Stop Trench TO247 ON Semiconductor - - - - - - - - - - - - - - - - - - - -
IGBT, Fairchild, FGD3040G2_F085 ON Semiconductor - - - - - - - - - - - - - - - - - - - -
ON Semiconductor FGD3N60LSDTM IGBT, 6 A 600 V, 3-Pin DPAK (TO-252) ON Semiconductor 6 A 600 V ±25V 40 W - DPAK (TO-252) Surface Mount N 3 - Single 6.73mm 6.22mm 2.39mm 6.73 x 6.22 x 2.39mm - - +150 °C -55 °C -
ON Semiconductor TIG065E8-TL-H IGBT, 150 A 400 V, 8-Pin ECH ON Semiconductor 150 A 400 V ±4V - - ECH Surface Mount N 8 1MHz Single 2.9mm 2.3mm 0.9mm 2.9 x 2.3 x 0.9mm - - +150 °C - -
ON Semiconductor ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252) ON Semiconductor 10 A 450 V ±14V 130 W - DPAK (TO-252) Surface Mount N 3 - Single 6.73mm 6.22mm 2.39mm 6.73 x 6.22 x 2.39mm - - +175 °C -40 °C -
ON Semiconductor NGTB10N60R2DT4G IGBT, 20 A 600 V, 3-Pin DPAK (TO-252) ON Semiconductor 20 A 600 V ±20V 72 W - DPAK (TO-252) Surface Mount N 3 1MHz Single 6.73mm 6.22mm 2.38mm 6.73 x 6.22 x 2.38mm 1340pF - +175 °C - -
ON Semiconductor NGTB05N60R2DT4G IGBT, 16 A 600 V, 3-Pin DPAK (TO-252) ON Semiconductor 16 A 600 V ±20V 56 W - DPAK (TO-252) Surface Mount N 3 1MHz Single 6.73mm 6.22mm 2.38mm 6.73 x 6.22 x 2.38mm 740pF - +175 °C - -
ON Semiconductor NGTB03N60R2DT4G IGBT, 9 A 600 V, 3-Pin DPAK (TO-252) ON Semiconductor 9 A 600 V ±20V 49 W - DPAK (TO-252) Surface Mount N 3 1MHz Single 6.73mm 6.22mm 2.38mm 6.73 x 6.22 x 2.38mm 415pF - +175 °C - -
ON Semiconductor FGPF10N60UNDF IGBT, 20 A 600 V, 3-Pin TO-220F ON Semiconductor 20 A 600 V ±20V 42 W - TO-220F Through Hole N 3 - Single 10.36mm 4.9mm 16.07mm 10.36 x 4.9 x 16.07mm - - +150 °C -55 °C -
ON Semiconductor FGB20N60SFD IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263) ON Semiconductor 20 A 600 V ±20V 208 W - D2PAK (TO-263) Surface Mount N 3 - Single 10.67mm 9.65mm 4.83mm 10.67 x 9.65 x 4.83mm - - +150 °C -55 °C -
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