SiC N-Channel MOSFET, 30 A, 1200 V, 7-Pin D2PAK Wolfspeed C3M0075120J

RS Stock No.: 192-3511Brand: WolfspeedManufacturers Part No.: C3M0075120J
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Technical documents

Specifications

Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

10.23mm

Width

9.12mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

48 nC @ 4/15V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

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£ 15.43

Each (ex VAT)

SiC N-Channel MOSFET, 30 A, 1200 V, 7-Pin D2PAK Wolfspeed C3M0075120J

1

Available in multiples of 1
1£ 15.43
2£ 30.86
3£ 46.29
4£ 61.72
5£ 77.15
6£ 92.58
7£ 108.01
8£ 123.44
9£ 138.87
10£ 154.30
11£ 169.73
12£ 185.16
13£ 200.59
14£ 216.02
15£ 231.45

£ 15.43

Each (ex VAT)

SiC N-Channel MOSFET, 30 A, 1200 V, 7-Pin D2PAK Wolfspeed C3M0075120J
Stock information temporarily unavailable.

1

Available in multiples of 1
1£ 15.43
2£ 30.86
3£ 46.29
4£ 61.72
5£ 77.15
6£ 92.58
7£ 108.01
8£ 123.44
9£ 138.87
10£ 154.30
11£ 169.73
12£ 185.16
13£ 200.59
14£ 216.02
15£ 231.45

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

10.23mm

Width

9.12mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

48 nC @ 4/15V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more