SiC N-Channel MOSFET, 63 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0032120K

RS Stock No.: 192-3498Brand: WolfspeedManufacturers Part No.: C3M0032120K
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

283 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Length

16.13mm

Typical Gate Charge @ Vgs

118 nC @ 4/15V

Height

23.6mm

Minimum Operating Temperature

-40 °C

Country of Origin

China

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

£ 37.57

Each (ex VAT)

SiC N-Channel MOSFET, 63 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0032120K

£ 37.57

Each (ex VAT)

SiC N-Channel MOSFET, 63 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0032120K
Stock information temporarily unavailable.

Buy in bulk

quantityUnit price
1 - 9£ 37.57
10+£ 37.49

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

283 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Length

16.13mm

Typical Gate Charge @ Vgs

118 nC @ 4/15V

Height

23.6mm

Minimum Operating Temperature

-40 °C

Country of Origin

China