N-Channel MOSFET, 108 A, 45 V, 8-Pin PowerPAK 1212-8S Vishay SISS50DN-T1-GE3

RS Stock No.: 200-6847Brand: VishayManufacturers Part No.: SISS50DN-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

108 A

Maximum Drain Source Voltage

45 V

Series

TrenchFET® Gen IV

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0041 Ω, 0.00283 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Number of Elements per Chip

1

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€ 0.814

Each (In a Pack of 50) (ex VAT)

N-Channel MOSFET, 108 A, 45 V, 8-Pin PowerPAK 1212-8S Vishay SISS50DN-T1-GE3

€ 0.814

Each (In a Pack of 50) (ex VAT)

N-Channel MOSFET, 108 A, 45 V, 8-Pin PowerPAK 1212-8S Vishay SISS50DN-T1-GE3
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Pack
50 - 50€ 0.814€ 40.71
100 - 200€ 0.743€ 37.17
250 - 450€ 0.555€ 27.73
500 - 1200€ 0.531€ 26.55
1250+€ 0.472€ 23.60

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

108 A

Maximum Drain Source Voltage

45 V

Series

TrenchFET® Gen IV

Package Type

PowerPAK 1212-8S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0041 Ω, 0.00283 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more