Vishay E Series Dual N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247AC SiHG080N60E-GE3
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
650 V
Series
E Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.08 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
2
Transistor Material
Si
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€ 96.17
€ 3.847 Each (In a Tube of 25) (ex VAT)
25
€ 96.17
€ 3.847 Each (In a Tube of 25) (ex VAT)
Stock information temporarily unavailable.
25
Stock information temporarily unavailable.
| quantity | Unit price | Per Tube |
|---|---|---|
| 25 - 25 | € 3.847 | € 96.17 |
| 50 - 100 | € 3.823 | € 95.58 |
| 125+ | € 3.705 | € 92.63 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
650 V
Series
E Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.08 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Number of Elements per Chip
2
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products