Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

RS Stock No.: 787-8995Brand: VishayManufacturers Part No.: SI9945BDY-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.3 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

72 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13 nC @ 10 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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£ 0.79

Each (In a Pack of 10) (ex VAT)

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3
Select packaging type

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10£ 7.90
20£ 15.80
30£ 23.70
40£ 31.60
50£ 39.50
60£ 47.40
70£ 55.30
80£ 63.20
90£ 71.10
100£ 75.00
110£ 82.50
120£ 90.00
130£ 97.50
140£ 105.00
150£ 112.50

£ 0.79

Each (In a Pack of 10) (ex VAT)

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10£ 7.90
20£ 15.80
30£ 23.70
40£ 31.60
50£ 39.50
60£ 47.40
70£ 55.30
80£ 63.20
90£ 71.10
100£ 75.00
110£ 82.50
120£ 90.00
130£ 97.50
140£ 105.00
150£ 112.50

Buy in bulk

quantityUnit pricePer Pack
10 - 90£ 0.79£ 7.90
100 - 240£ 0.75£ 7.50
250 - 490£ 0.70£ 7.00
500 - 990£ 0.66£ 6.60
1000+£ 0.64£ 6.40

Ideate. Create. Collaborate

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No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.3 A

Maximum Drain Source Voltage

60 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

72 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13 nC @ 10 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Product details

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more