Technical documents
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.7 A, 6.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
42.5 mΩ, 62 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3 W, 3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V, 25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
Product details
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 19.59
€ 0.979 Each (In a Pack of 20) (ex VAT)
Standard
20
€ 19.59
€ 0.979 Each (In a Pack of 20) (ex VAT)
Stock information temporarily unavailable.
Standard
20
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 180 | € 0.979 | € 19.59 |
| 200 - 480 | € 0.767 | € 15.34 |
| 500 - 980 | € 0.649 | € 12.98 |
| 1000 - 1980 | € 0.625 | € 12.51 |
| 2000+ | € 0.531 | € 10.62 |
Technical documents
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.7 A, 6.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
42.5 mΩ, 62 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
3 W, 3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
11.7 nC @ 10 V, 25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
Product details


