Dual N-Channel MOSFET Transistor, 1.13 A, 20 V, 6-Pin SOT-363 Vishay SI1912EDH-T1-E3

RS Stock No.: 710-3235Brand: VishayManufacturers Part No.: SI1912EDH-T1-E3IMPA: 0
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Technical documents

Specifications

Channel Mode

Enhancement

Number of Elements per Chip

2

Channel Type

N

Minimum Operating Temperature

-55 °C

Pin Count

6

Minimum Gate Threshold Voltage

0.45V

Maximum Gate Source Voltage

-12 V, +12 V

Mounting Type

Surface Mount

Maximum Drain Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Width

1.25mm

Height

0.9mm

Length

2.05mm

Maximum Continuous Drain Current

1.13 A

Package Type

SOT-363

Maximum Drain Source Resistance

280 mΩ

Brand

Vishay

Country of Origin

China

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P.O.A.

Dual N-Channel MOSFET Transistor, 1.13 A, 20 V, 6-Pin SOT-363 Vishay SI1912EDH-T1-E3
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P.O.A.

Dual N-Channel MOSFET Transistor, 1.13 A, 20 V, 6-Pin SOT-363 Vishay SI1912EDH-T1-E3
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents

Specifications

Channel Mode

Enhancement

Number of Elements per Chip

2

Channel Type

N

Minimum Operating Temperature

-55 °C

Pin Count

6

Minimum Gate Threshold Voltage

0.45V

Maximum Gate Source Voltage

-12 V, +12 V

Mounting Type

Surface Mount

Maximum Drain Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Width

1.25mm

Height

0.9mm

Length

2.05mm

Maximum Continuous Drain Current

1.13 A

Package Type

SOT-363

Maximum Drain Source Resistance

280 mΩ

Brand

Vishay

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more