Dual N/P-Channel-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 Vishay SI1029X-T1-GE3

RS Stock No.: 787-9055PBrand: VishayManufacturers Part No.: SI1029X-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

190 mA, 300 mA

Maximum Drain Source Voltage

60 V

Package Type

SC-89-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

3 Ω, 8 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

250 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

1700 nC @ 15 V, 750 nC @ 4.5 V

Width

1.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.6mm

Product details

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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£ 0.45

Each (Supplied on a Reel) (ex VAT)

Dual N/P-Channel-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 Vishay SI1029X-T1-GE3
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£ 0.45

Each (Supplied on a Reel) (ex VAT)

Dual N/P-Channel-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 Vishay SI1029X-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Reel
20 - 180£ 0.45£ 9.00
200 - 480£ 0.43£ 8.60
500 - 980£ 0.39£ 7.80
1000 - 1980£ 0.37£ 7.40
2000+£ 0.35£ 7.00

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Technical documents

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

190 mA, 300 mA

Maximum Drain Source Voltage

60 V

Package Type

SC-89-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

3 Ω, 8 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

250 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

1700 nC @ 15 V, 750 nC @ 4.5 V

Width

1.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.6mm

Product details

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more