Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Width
6.29mm
Transistor Material
Si
Height
3.37mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
P.O.A.
Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
50
P.O.A.
Each (Supplied in a Tube) (ex VAT)
Stock information temporarily unavailable.
Production pack (Tube)
50
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Width
6.29mm
Transistor Material
Si
Height
3.37mm
Minimum Operating Temperature
-55 °C
Product details


