Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Height
6.22mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 8.38
€ 0.838 Each (In a Pack of 10) (ex VAT)
Standard
10
€ 8.38
€ 0.838 Each (In a Pack of 10) (ex VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | € 0.838 | € 8.38 |
| 100 - 240 | € 0.767 | € 7.67 |
| 250 - 490 | € 0.72 | € 7.20 |
| 500 - 990 | € 0.696 | € 6.96 |
| 1000+ | € 0.578 | € 5.78 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.73mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
8.3 nC @ 10 V
Width
2.38mm
Transistor Material
Si
Height
6.22mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products