Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAIR 6 x 5F SiZF906ADT-T1-GE3

RS Stock No.: 178-3704Brand: Vishay SiliconixManufacturers Part No.: SiZF906ADT-T1-GE3
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Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 6 x 5F

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

83 W

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

2

Width

6mm

Length

5mm

Typical Gate Charge @ Vgs

100 (Channel 2) nC @ 10 V, 24.5 (Channel 1) nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.7mm

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P.O.A.

Each (On a Reel of 3000) (ex VAT)

Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAIR 6 x 5F SiZF906ADT-T1-GE3

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

Each (On a Reel of 3000) (ex VAT)

Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAIR 6 x 5F SiZF906ADT-T1-GE3

Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAIR 6 x 5F

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

83 W

Maximum Gate Source Voltage

-16 V, +20 V

Number of Elements per Chip

2

Width

6mm

Length

5mm

Typical Gate Charge @ Vgs

100 (Channel 2) nC @ 10 V, 24.5 (Channel 1) nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

0.7mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more