Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 60 V, 8-Pin PowerPAK SO-8 SiR188DP-T1-RE3

RS Stock No.: 178-3687Brand: Vishay SiliconixManufacturers Part No.: SiR188DP-T1-RE3
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

3.6V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

€ 2,867.40

€ 0.956 Each (On a Reel of 3000) (ex VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 60 V, 8-Pin PowerPAK SO-8 SiR188DP-T1-RE3

3000

Available in multiples of 3000
3000€ 2,867.40
6000€ 5,734.80
9000€ 8,602.20
12000€ 11,469.60
15000€ 14,337.00
18000€ 17,204.40
21000€ 20,071.80
24000€ 22,939.20
27000€ 25,806.60
30000€ 28,674.00
33000€ 31,541.40
36000€ 34,408.80
39000€ 37,276.20
42000€ 40,143.60
45000€ 43,011.00

€ 2,867.40

€ 0.956 Each (On a Reel of 3000) (ex VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 60 V, 8-Pin PowerPAK SO-8 SiR188DP-T1-RE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000€ 2,867.40
6000€ 5,734.80
9000€ 8,602.20
12000€ 11,469.60
15000€ 14,337.00
18000€ 17,204.40
21000€ 20,071.80
24000€ 22,939.20
27000€ 25,806.60
30000€ 28,674.00
33000€ 31,541.40
36000€ 34,408.80
39000€ 37,276.20
42000€ 40,143.60
45000€ 43,011.00

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK SO-8

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

3.6V

Maximum Power Dissipation

65.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

5mm

Length

5.99mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.07mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more