Technical documents
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
SC-70-6L
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Number of Elements per Chip
1
Width
1.35mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Country of Origin
China
€ 6.96
€ 0.696 Each (In a Pack of 10) (ex VAT)
Standard
10
€ 6.96
€ 0.696 Each (In a Pack of 10) (ex VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | € 0.696 | € 6.96 |
| 50 - 90 | € 0.649 | € 6.49 |
| 100 - 490 | € 0.625 | € 6.25 |
| 500 - 990 | € 0.602 | € 6.02 |
| 1000+ | € 0.531 | € 5.31 |
Technical documents
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
60 V
Package Type
SC-70-6L
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
19 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
8.9 nC @ 10 V
Number of Elements per Chip
1
Width
1.35mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Country of Origin
China


