Technical documents
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.4 A
Maximum Drain Source Voltage
250 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
5mm
Length
5.99mm
Typical Gate Charge @ Vgs
14.9 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.07mm
Country of Origin
China
€ 12.27
€ 2.454 Each (In a Pack of 5) (ex VAT)
Standard
5
€ 12.27
€ 2.454 Each (In a Pack of 5) (ex VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | € 2.454 | € 12.27 |
50 - 95 | € 2.077 | € 10.38 |
100 - 495 | € 1.652 | € 8.26 |
500 - 995 | € 1.451 | € 7.26 |
1000+ | € 1.286 | € 6.43 |
Technical documents
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.4 A
Maximum Drain Source Voltage
250 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
5mm
Length
5.99mm
Typical Gate Charge @ Vgs
14.9 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.07mm
Country of Origin
China