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Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L

RS Stock No.: 171-2481PBrand: ToshibaManufacturers Part No.: TK60S06K3L
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

7mm

Length

6.5mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

2.3mm

Automotive Standard

AEC-Q101

Country of Origin

Japan

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Stock information temporarily unavailable.

€ 79.06

€ 1.581 Each (Supplied on a Reel) (ex VAT)

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L
Select packaging type

€ 79.06

€ 1.581 Each (Supplied on a Reel) (ex VAT)

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK TK60S06K3L
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
50 - 95€ 1.581€ 7.91
100 - 995€ 1.428€ 7.14
1000+€ 1.31€ 6.55

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

7mm

Length

6.5mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

2.3mm

Automotive Standard

AEC-Q101

Country of Origin

Japan

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more