N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS Toshiba TK25A60X5,S5X(M
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Number of Elements per Chip
1
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Forward Diode Voltage
1.7V
Product details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
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P.O.A.
2
P.O.A.
2
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Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.5mm
Number of Elements per Chip
1
Transistor Material
Si
Length
10mm
Typical Gate Charge @ Vgs
60 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15mm
Forward Diode Voltage
1.7V
Product details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products