Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Country of Origin
China
Product details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
€ 109.27
€ 5.463 Each (Supplied in a Bag) (ex VAT)
Production pack (Bag)
20
€ 109.27
€ 5.463 Each (Supplied in a Bag) (ex VAT)
Stock information temporarily unavailable.
Production pack (Bag)
20
Stock information temporarily unavailable.
quantity | Unit price | Per Bag |
---|---|---|
20 - 38 | € 5.463 | € 10.93 |
40 - 72 | € 4.873 | € 9.75 |
74 - 148 | € 4.685 | € 9.37 |
150+ | € 4.637 | € 9.28 |
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Country of Origin
China
Product details