Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
U-MOSVIII-H
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
5.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
2.3mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Stock information temporarily unavailable.
Please check again later.
€ 7.02
€ 1.404 Each (In a Pack of 5) (ex VAT)
Standard
5
€ 7.02
€ 1.404 Each (In a Pack of 5) (ex VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | € 1.404 | € 7.02 |
25 - 45 | € 1.215 | € 6.08 |
50 - 245 | € 1.192 | € 5.96 |
250 - 495 | € 1.168 | € 5.84 |
500+ | € 1.145 | € 5.72 |
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
U-MOSVIII-H
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
5.5mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
2.3mm
Country of Origin
Japan
Product details