N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TK15S04N1L,LQ(O

RS Stock No.: 133-2798Brand: ToshibaManufacturers Part No.: TK15S04N1L,LQ(O
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

U-MOSVIII-H

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

5.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

2.3mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

€ 7.02

€ 1.404 Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TK15S04N1L,LQ(O
Select packaging type

€ 7.02

€ 1.404 Each (In a Pack of 5) (ex VAT)

N-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TK15S04N1L,LQ(O
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 20€ 1.404€ 7.02
25 - 45€ 1.215€ 6.08
50 - 245€ 1.192€ 5.96
250 - 495€ 1.168€ 5.84
500+€ 1.145€ 5.72

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

U-MOSVIII-H

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

46 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.5mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

5.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

2.3mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more