Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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£ 1.05
Each (In a Pack of 5) (ex VAT)
5
£ 1.05
Each (In a Pack of 5) (ex VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | £ 1.05 | £ 5.25 |
25 - 95 | £ 0.93 | £ 4.65 |
100 - 245 | £ 0.83 | £ 4.15 |
250 - 495 | £ 0.79 | £ 3.95 |
500+ | £ 0.75 | £ 3.75 |
Technical documents
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
10.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Product details