Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh, SuperMESH
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
87 nC @ 10 V
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.15mm
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 94.52
€ 3.151 Each (In a Tube of 30) (ex VAT)
30
€ 94.52
€ 3.151 Each (In a Tube of 30) (ex VAT)
Stock information temporarily unavailable.
30
Stock information temporarily unavailable.
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 60 | € 3.151 | € 94.52 |
| 90 - 480 | € 2.561 | € 76.82 |
| 510 - 960 | € 2.313 | € 69.38 |
| 990 - 4980 | € 1.982 | € 59.47 |
| 5010+ | € 1.959 | € 58.76 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10.5 A
Maximum Drain Source Voltage
800 V
Series
MDmesh, SuperMESH
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
87 nC @ 10 V
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Width
5.15mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.15mm
Product details


