Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
35 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Height
9.15mm
Minimum Operating Temperature
-65 °C
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 65.49
€ 1.31 Each (In a Tube of 50) (ex VAT)
50
€ 65.49
€ 1.31 Each (In a Tube of 50) (ex VAT)
Stock information temporarily unavailable.
50
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | € 1.31 | € 65.49 |
| 100 - 450 | € 1.097 | € 54.87 |
| 500 - 950 | € 0.932 | € 46.61 |
| 1000 - 4950 | € 0.861 | € 43.07 |
| 5000+ | € 0.72 | € 35.99 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Series
STripFET II
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +15 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
35 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Height
9.15mm
Minimum Operating Temperature
-65 °C
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


