Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
195 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
4.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.6V
Height
15.75mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
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Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
195 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
4.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.6V
Height
15.75mm
Minimum Operating Temperature
-55 °C
Country of Origin
China