STMicroelectronics STripFET P-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-223 STN3P6F6
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.7mm
Typical Gate Charge @ Vgs
6.4 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
3.7mm
Transistor Material
Si
Forward Diode Voltage
1.1V
Minimum Operating Temperature
-55 °C
Height
1.8mm
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 41.89
€ 0.838 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
50
€ 41.89
€ 0.838 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
50
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 90 | € 0.838 | € 8.38 |
| 100 - 240 | € 0.767 | € 7.67 |
| 250 - 490 | € 0.696 | € 6.96 |
| 500+ | € 0.673 | € 6.73 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.7mm
Typical Gate Charge @ Vgs
6.4 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
3.7mm
Transistor Material
Si
Forward Diode Voltage
1.1V
Minimum Operating Temperature
-55 °C
Height
1.8mm
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products