STMicroelectronics STGP10NC60KD IGBT, 20 A 600 V, 3-Pin TO-220, Through Hole
Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 9.15mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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£ 1.08
Each (In a Pack of 5) (ex VAT)
5
£ 1.08
Each (In a Pack of 5) (ex VAT)
5
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | £ 1.08 | £ 5.40 |
| 25 - 45 | £ 1.05 | £ 5.25 |
| 50 - 120 | £ 0.95 | £ 4.75 |
| 125 - 245 | £ 0.87 | £ 4.35 |
| 250+ | £ 0.85 | £ 4.25 |
Ideate. Create. Collaborate
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Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 9.15mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products