Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
6A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
25W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.8V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Height
16.4mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
€ 54.28
€ 1.794 Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
25
€ 54.28
€ 1.794 Each (Supplied in a Tube) (ex VAT)
Stock information temporarily unavailable.
Production pack (Tube)
25
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 245 | € 1.794 | € 8.97 |
| 250 - 495 | € 1.381 | € 6.90 |
| 500+ | € 1.31 | € 6.55 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
6A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
25W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.8V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Height
16.4mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
