Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.4mm
Typical Gate Charge @ Vgs
12.6 nC @ 10 V
Width
9.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.6mm
Product details
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
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€ 10.38
€ 2.077 Each (In a Pack of 5) (ex VAT)
Standard
5
€ 10.38
€ 2.077 Each (In a Pack of 5) (ex VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 5 | € 2.077 | € 10.38 |
10 - 95 | € 1.794 | € 8.97 |
100 - 495 | € 1.357 | € 6.78 |
500+ | € 1.168 | € 5.84 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Series
STripFET F7
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.4mm
Typical Gate Charge @ Vgs
12.6 nC @ 10 V
Width
9.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.6mm
Product details
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.