Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
1200 V
Package Type
Hip247
Series
SCT
Mounting Type
Through Hole
Pin Count
3
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
1
Country of Origin
China
P.O.A.
STMicroelectronics SCT SiC N-Channel MOSFET, 40 A, 1200 V, 3-Pin HIP247 SCT040W120G3AG
Select packaging type
Production pack (Tube)
1
P.O.A.
STMicroelectronics SCT SiC N-Channel MOSFET, 40 A, 1200 V, 3-Pin HIP247 SCT040W120G3AG
Stock information temporarily unavailable.
Select packaging type
Production pack (Tube)
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
1200 V
Package Type
Hip247
Series
SCT
Mounting Type
Through Hole
Pin Count
3
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
1
Country of Origin
China


