Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
536 W
Number of Transistors
1
Package Type
TO-247
Configuration
Single
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Country of Origin
China
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P.O.A.
STMicroelectronics GWA40MS120DF4AG Single IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole
Select packaging type
Standard
1
P.O.A.
STMicroelectronics GWA40MS120DF4AG Single IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.
Select packaging type
Standard
1
Stock information temporarily unavailable.
Please check again later.
Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
536 W
Number of Transistors
1
Package Type
TO-247
Configuration
Single
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Country of Origin
China