ROHM RRR040P03 P-Channel MOSFET, 4 A, 30 V, 3-Pin TSMT-3 RQ5E040RPTL
Technical documents
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Series
RRR040P03
Package Type
TSMT-3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Typical Gate Charge @ Vgs
10.5 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
0.85mm
Forward Diode Voltage
1.2V
Product details
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 35.40
€ 0.354 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
100
€ 35.40
€ 0.354 Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 100 - 180 | € 0.354 | € 7.08 |
| 200 - 480 | € 0.354 | € 7.08 |
| 500 - 980 | € 0.33 | € 6.61 |
| 1000+ | € 0.33 | € 6.61 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
30 V
Series
RRR040P03
Package Type
TSMT-3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Typical Gate Charge @ Vgs
10.5 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
0.85mm
Forward Diode Voltage
1.2V
Product details
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products