P-Channel MOSFET, 7 A, 12 V, 8-Pin TSMT-8 ROHM RQ1A070APTR

RS Stock No.: 177-6781Brand: ROHMManufacturers Part No.: RQ1A070APTR
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Technical documents

Specifications

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

12 V

Package Type

TSMT-8

Series

RQ1A070AP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

0 to -8 V

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

80 nC @ 4.5 V

Width

2.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

0.8mm

Country of Origin

Japan

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£ 0.31

Each (In a Pack of 20) (ex VAT)

P-Channel MOSFET, 7 A, 12 V, 8-Pin TSMT-8 ROHM RQ1A070APTR

20

Available in multiples of 20
20£ 6.20
40£ 12.40
60£ 18.60
80£ 24.80
100£ 31.00
120£ 37.20
140£ 43.40
160£ 49.60
180£ 55.80
200£ 62.00
220£ 68.20
240£ 74.40
260£ 80.60
280£ 86.80
300£ 93.00

£ 0.31

Each (In a Pack of 20) (ex VAT)

P-Channel MOSFET, 7 A, 12 V, 8-Pin TSMT-8 ROHM RQ1A070APTR
Stock information temporarily unavailable.

20

Available in multiples of 20
20£ 6.20
40£ 12.40
60£ 18.60
80£ 24.80
100£ 31.00
120£ 37.20
140£ 43.40
160£ 49.60
180£ 55.80
200£ 62.00
220£ 68.20
240£ 74.40
260£ 80.60
280£ 86.80
300£ 93.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

12 V

Package Type

TSMT-8

Series

RQ1A070AP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

0 to -8 V

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

80 nC @ 4.5 V

Width

2.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

0.8mm

Country of Origin

Japan

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more