Dual P-Channel MOSFET, 4 A, 30 V, 8-Pin TSMT-8 ROHM QS8J4TR

RS Stock No.: 178-5996Brand: ROHMManufacturers Part No.: QS8J4TR
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Technical documents

Specifications

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

TSMT-8

Series

QS8J4

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

84 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.5 W

Maximum Gate Source Voltage

±20 V

Width

2.5mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

13 nC @ 10 V (N Channel)

Forward Diode Voltage

1.2V

Height

0.8mm

Country of Origin

Japan

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P.O.A.

Dual P-Channel MOSFET, 4 A, 30 V, 8-Pin TSMT-8 ROHM QS8J4TR

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

Dual P-Channel MOSFET, 4 A, 30 V, 8-Pin TSMT-8 ROHM QS8J4TR
Stock information temporarily unavailable.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

30 V

Package Type

TSMT-8

Series

QS8J4

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

84 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.5 W

Maximum Gate Source Voltage

±20 V

Width

2.5mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

13 nC @ 10 V (N Channel)

Forward Diode Voltage

1.2V

Height

0.8mm

Country of Origin

Japan

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more