Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-28FL, VEC8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
194 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
2.3mm
Length
2.9mm
Number of Elements per Chip
2
Forward Diode Voltage
1.2V
Height
0.73mm
Country of Origin
China
Product details
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
10
P.O.A.
10
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-28FL, VEC8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
194 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Width
2.3mm
Length
2.9mm
Number of Elements per Chip
2
Forward Diode Voltage
1.2V
Height
0.73mm
Country of Origin
China
Product details