Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
15 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
225 mW
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V dc
Maximum Emitter Base Voltage
3 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3.04 x 1.4 x 1.01mm
Country of Origin
China
Product details
RF Bipolar Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
€ 7.08
€ 0.071 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
100
€ 7.08
€ 0.071 Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
15 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
225 mW
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V dc
Maximum Emitter Base Voltage
3 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
3.04 x 1.4 x 1.01mm
Country of Origin
China
Product details
RF Bipolar Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.


