Technical documents
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Maximum Drain Source Voltage Vds
0.2V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Drain Source Resistance Rds
80Ω
Pin Count
3
Drain Source Current Ids
8 mA
Minimum Operating Temperature
-55°C
Maximum Power Dissipation Pd
350mW
Maximum Operating Temperature
150°C
Length
2.92mm
Height
0.93mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Stock information temporarily unavailable.
€ 18.88
€ 0.189 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
100
€ 18.88
€ 0.189 Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100
| quantity | Unit price | Per Reel |
|---|---|---|
| 100 - 950 | € 0.189 | € 9.44 |
| 1000 - 2950 | € 0.165 | € 8.26 |
| 3000 - 8950 | € 0.142 | € 7.08 |
| 9000+ | € 0.142 | € 7.08 |
Technical documents
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
Type N
Maximum Drain Source Voltage Vds
0.2V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Drain Source Resistance Rds
80Ω
Pin Count
3
Drain Source Current Ids
8 mA
Minimum Operating Temperature
-55°C
Maximum Power Dissipation Pd
350mW
Maximum Operating Temperature
150°C
Length
2.92mm
Height
0.93mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.


