Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 40mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
12 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
85pF
Source Gate On-Capacitance
85pF
Dimensions
4.58 x 3.86 x 4.58mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
4.58mm
Height
4.58mm
Width
3.86mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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€ 0.425
Each (Supplied in a Bag) (ex VAT)
Production pack (Bag)
100
€ 0.425
Each (Supplied in a Bag) (ex VAT)
Production pack (Bag)
100
Buy in bulk
quantity | Unit price | Per Bag |
---|---|---|
100 - 225 | € 0.425 | € 10.62 |
250 - 475 | € 0.378 | € 9.44 |
500+ | € 0.33 | € 8.26 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 40mA
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
12 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Drain Gate On-Capacitance
85pF
Source Gate On-Capacitance
85pF
Dimensions
4.58 x 3.86 x 4.58mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
4.58mm
Height
4.58mm
Width
3.86mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.