Dual N-Channel MOSFET, 30 A, 40 A, 25 V, 8-Pin Power 56 onsemi FDMS3602S
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
30 A, 40 A
Maximum Drain Source Voltage
25 V
Package Type
Power 56
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.9 mΩ, 8.7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.2 W, 2.5 W
Transistor Configuration
Series
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
19 nC @ 10 V, 45 nC @ 10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
6mm
Transistor Material
Si
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Height
1.05mm
Product details
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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P.O.A.
Standard
1
P.O.A.
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
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Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
30 A, 40 A
Maximum Drain Source Voltage
25 V
Package Type
Power 56
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.9 mΩ, 8.7 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.2 W, 2.5 W
Transistor Configuration
Series
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
19 nC @ 10 V, 45 nC @ 10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
6mm
Transistor Material
Si
Series
PowerTrench
Minimum Operating Temperature
-55 °C
Height
1.05mm
Product details
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products