Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Width
1.5mm
Length
2.9mm
Height
1.1mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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£ 0.35
Each (Supplied on a Reel) (ex VAT)
25
£ 0.35
Each (Supplied on a Reel) (ex VAT)
25
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
25 - 100 | £ 0.35 | £ 8.75 |
125 - 225 | £ 0.33 | £ 8.25 |
250 - 600 | £ 0.29 | £ 7.25 |
625 - 1225 | £ 0.25 | £ 6.25 |
1250+ | £ 0.19 | £ 4.75 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
10 to 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.5 x 1.1mm
Width
1.5mm
Length
2.9mm
Height
1.1mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.